IndiumV3, Main, Repository, bibRecord, 001655

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Identifieur interne : 001655 ( Main/Repository ); précédent : 001654; suivant : 001656

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Auteurs : RBID : Pascal:12-0052956

Descripteurs français

Pascal (Inist)
- Effet pression, Diode laser, Laser puits quantique, Refroidissement, Haute pression, Effet température, Amplification optique, Gallium Indium Arséniure Mixte, Arséniure de gallium, InGaAs, GaAs.

English descriptors

KwdEn :
- Cooling, Gallium Indium Arsenides Mixed, Gallium arsenides, High pressure, Laser diodes, Optical amplification, Pressure effects, Quantum well lasers, Temperature effects.

Abstract

Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to -140 nm by increasing the pressure up to 20 kbar and -60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pressure and temperature dependence of gain in InGaAs/GaAs laser diode</title>
<author><name sortKey="Bajda, Monika" uniqKey="Bajda M">Monika Bajda</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoza 69</s1>
<s2>00-681 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>00-681 Warszawa</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<sZ>4 aut.</sZ>
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<country>Pologne</country>
<wicri:noRegion>01-142 Warszawa</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Piechal, Bernard" uniqKey="Piechal B">Bernard Piechal</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>01-142 Warszawa</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dybala, Filip" uniqKey="Dybala F">Filip Dybala</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<sZ>4 aut.</sZ>
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<country>Pologne</country>
<wicri:noRegion>01-142 Warszawa</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bercha, Artem" uniqKey="Bercha A">Artem Bercha</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Pologne</country>
<wicri:noRegion>01-142 Warszawa</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Uzhgorod National University, Pidhirna 46</s1>
<s2>88000 Uzhgorod</s2>
<s3>UKR</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>88000 Uzhgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Trzeciakowski, Witold" uniqKey="Trzeciakowski W">Witold Trzeciakowski</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>01-142 Warszawa</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Majewski, Jacek A" uniqKey="Majewski J">Jacek A. Majewski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoza 69</s1>
<s2>00-681 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>00-681 Warszawa</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0052956</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0052956 INIST</idno>
<idno type="RBID">Pascal:12-0052956</idno>
<idno type="wicri:Area/Main/Corpus">002342</idno>
<idno type="wicri:Area/Main/Repository">001655</idno>
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<seriesStmt><idno type="ISSN">0370-1972</idno>
<title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title>
<title level="j" type="main">Physica status solidi. B. Basic research</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cooling</term>
<term>Gallium Indium Arsenides Mixed</term>
<term>Gallium arsenides</term>
<term>High pressure</term>
<term>Laser diodes</term>
<term>Optical amplification</term>
<term>Pressure effects</term>
<term>Quantum well lasers</term>
<term>Temperature effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet pression</term>
<term>Diode laser</term>
<term>Laser puits quantique</term>
<term>Refroidissement</term>
<term>Haute pression</term>
<term>Effet température</term>
<term>Amplification optique</term>
<term>Gallium Indium Arséniure Mixte</term>
<term>Arséniure de gallium</term>
<term>InGaAs</term>
<term>GaAs</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to -140 nm by increasing the pressure up to 20 kbar and -60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.</div>
</front>
</TEI>
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<fA02 i1="01"><s0>PSSBBD</s0>
</fA02>
<fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0>
</fA03>
<fA05><s2>249</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Pressure and temperature dependence of gain in InGaAs/GaAs laser diode</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BAJDA (Monika)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PIECHAL (Bernard)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DYBALA (Filip)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BERCHA (Artem)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>TRZECIAKOWSKI (Witold)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MAJEWSKI (Jacek A.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoza 69</s1>
<s2>00-681 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37</s1>
<s2>01-142 Warszawa</s2>
<s3>POL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Uzhgorod National University, Pidhirna 46</s1>
<s2>88000 Uzhgorod</s2>
<s3>UKR</s3>
<sZ>4 aut.</sZ>
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<fA20><s1>217-221</s1>
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<fA21><s1>2012</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>10183B</s2>
<s5>354000506044700310</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0052956</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to -140 nm by increasing the pressure up to 20 kbar and -60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Effet pression</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Pressure effects</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser puits quantique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Quantum well lasers</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Refroidissement</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Cooling</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Haute pression</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>High pressure</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Effet température</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Temperature effects</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Amplification optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Optical amplification</s0>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Amplificación óptica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>030</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri